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| Preliminary 03.05.26 P0511946H 1.9 GHz band Features * * * * * * * 1.9 GHz frequency band Typical 39.0 dBm output power Low power consumption 43 W typ. Excellent adjacent leakage power Typical 30 dB power gain Cost-effective metal package Low thermal resistance structure Power Amplifier Module Applications * Final stage power amplifier of base station for PHS Description The P0511946H is a high performance 1.9 GHz band power amplifier module capable of 39 dBm output power with a typical 30 dB gain at 1.9 GHz band, housed in a cost effective metal package. This device features a low power consumption owing to the excellent linearity and high gain of the pulse-doped GaAs MESFET developed by SEI, dissipating 3600 mA typical. It operates from +12 V and -5 V power supplies. Power Amplifier Module Absolute Maximum Ratings P0511946H Case Temperature Tc=35 C Parameter DC Supply Voltage Input Power Storage Temperature Operating Case Temperature Symbol Vd Vg Pin Tstg Topt Value 13*1 -6 15 -40 to + 90 -20 to + 85*2 Units V V dBm C C Notes: Operating of this device above any one of these parameters may cause permanent damage. *1:Vg1,Vg2=-5.0 V *2:Burst Operation (Duty Ratio<=50%) Electrical Specifications Case Temperature Tc=35C Value Parameter Frequency Supply Current (under operation) Gate Current Power Gain Input VSWR 2f0 Harmonic Distortion 3f0 ACLR1 Adjacent Channel Leakage Power Ratio Occupied Frequency Bandwidth ACLR2 600 kHz offset 900 kHz offset -40 -68 -74 270 dBc dBc dBc kHz Symbol f ID IG Ga Pout=39.0 dBm Vd1=12V Vd2=12 V Vd3=12V Vg1=-5.0 V Vg2=-5.0 V Test Conditions Min. 1880 3600 Typ. Max. 1920 4000 20 27.0 30.0 1.8 2.5 -40 dBc MHz mA mA dB Units Power Amplifier Module Power Characteristics 45 f=1900MHz Vd1=Vd2=Vd3=12V Vg1=Vg2=-5V 5500 P0511946H 40 Pout 5000 Pout (dBm), Ga (dB) Ga 30 Id 25 3500 4000 20 -15 3000 -10 -5 0 Pin (dBm) 5 10 15 Adjacent Channel Leakage Power Ratio -60 f=1900MHz Vd1=Vd2=Vd3=12V Vg1=Vg2=-5V /4DQPSK 384kbps =0.5 PN9 -600kHz +600kHz -900kHz +900kHz -65 ACLR (dBc) -70 -75 -80 25 30 35 Pout (dBm) 40 45 ID (mA) 35 4500 Power Amplifier Module Package Drawings (Dimensions are mm) P0511946H 53.0 48.0 43.0 20.4MAX 18.7 P0511946H 10.5 0 2.7 3.0 . (1) (2) (3) (4) (5) (6) (7) (8) (9) 8.0 7.5 2.5 2.5 15.0 2.5 2.5 7.5 14.0 1.75 53.0 2.5 2.0 6.2MAX lot no. Dimensions are mm (+/- 0.3mm) Lead Size : 0.25x0.5 Note: (1)Lead Size (2)Nominal Variation of Lead Pitch (3)Nominal Variation of parts undescribed : 0.25x0.5 : 0.3 : 0.3 Pin Assignment (1) RFin (5) Vd2 (9) RFout (2) GND (6) Vg2 Case:GND (3) Vd1 (7) Vd3 (4) Vg1 (8) GND Power Amplifier Module Evaluation Board Layout (Dimensions are mm) KP004J 60 P0511946H 60 C2 C1 C4 C3 C5 C6 52 Circuit Board 0.8mm Dielectric Thickness r=4.0,18m copper RFin 22 RFout Vd1 Vg1 Vd2 Vg2 Vd3 RFin Vd1 Vg1 Vd2 Vg2 Vd3 C6 C1 C2 C3 C4 C5 RFout RFin Vg1 Vd2 Vg2 Vd3 Vd1 RFout DESIGNATION C2,C4 C1,C3,C5,C6 VALUE 0.1F 1.0F Electron Device Department |
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